| Автор | J A Kalomiros |
| Автор | A N Anagnostopoulos |
| Автор | J Spyridelis |
| Дата выпуска | 1989-07-01 |
| dc.description | Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>(II) single crystals were synthesised by vapour transport reaction and characterised by means of X-ray diffraction and electron microscopy. Transmission spectra were used for the evaluation of the energy gap in the temperature range 10-340 K. The electrical behaviour of the material was examined. Measurements of the n-type electrical conductivity as a function of the reciprocal temperature and an I(U) characteristic led to the determination of trap parameters. Four energy levels were resolved in the range 0.29-1.0 eV below the conduction band, with concentrations varying from 10<sup>9</sup> to 10<sup>20</sup> cm<sup>-3</sup>. The electrical anisotropy was also investigated, and was found to be thermally activated. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Temperature dependence of the energy gap and some electrical properties of Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub> (II) single crystals |
| Тип | paper |
| DOI | 10.1088/0268-1242/4/7/007 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 4 |
| Первая страница | 536 |
| Последняя страница | 542 |
| Аффилиация | J A Kalomiros; Dept. of Phys., Solid State Sect., Aristotle Univ. of Thessaloniki, Greece |
| Аффилиация | A N Anagnostopoulos; Dept. of Phys., Solid State Sect., Aristotle Univ. of Thessaloniki, Greece |
| Аффилиация | J Spyridelis; Dept. of Phys., Solid State Sect., Aristotle Univ. of Thessaloniki, Greece |
| Выпуск | 7 |
