Band structures of HgCdTe and HgZnTe alloys and superlattices
A B Chen; Y M Lai-Hsu; S Krishnamurthy; M A Berding; A B Chen; Dept. of Phys., Auburn Univ., AL, USA; Y M Lai-Hsu; Dept. of Phys., Auburn Univ., AL, USA; S Krishnamurthy; Dept. of Phys., Auburn Univ., AL, USA; M A Berding; Dept. of Phys., Auburn Univ., AL, USA
Журнал:
Semiconductor Science and Technology
Дата:
1990-03-01
Аннотация:
The band structures of HgTe, CdTe, ZnTe, the alloys Hg<sub>1-x</sub>Cd<sub>x</sub>Te (HCT) and Hg<sub>1-x</sub>Zn<sub>x</sub>Te (HZT) and several small-gap superlattices (SL) are calculated using a tight-binding model. The authors calculations show a nearly linear dependence of the energy gap on the concentration in HCT, but a strong non-linear variation in HZT. The electron mass as a function of the band gap is found to be the same in HCT and HZT in the small-gap region. Their calculated SL bands, in fair agreement with the most recent experiments and theories, support the assumption of a large valence band offset (350 meV) between HgTe and CdTe.
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