| Автор | A B Chen |
| Автор | Y M Lai-Hsu |
| Автор | S Krishnamurthy |
| Автор | M A Berding |
| Дата выпуска | 1990-03-01 |
| dc.description | The band structures of HgTe, CdTe, ZnTe, the alloys Hg<sub>1-x</sub>Cd<sub>x</sub>Te (HCT) and Hg<sub>1-x</sub>Zn<sub>x</sub>Te (HZT) and several small-gap superlattices (SL) are calculated using a tight-binding model. The authors calculations show a nearly linear dependence of the energy gap on the concentration in HCT, but a strong non-linear variation in HZT. The electron mass as a function of the band gap is found to be the same in HCT and HZT in the small-gap region. Their calculated SL bands, in fair agreement with the most recent experiments and theories, support the assumption of a large valence band offset (350 meV) between HgTe and CdTe. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Band structures of HgCdTe and HgZnTe alloys and superlattices |
| Тип | paper |
| DOI | 10.1088/0268-1242/5/3S/021 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 5 |
| Первая страница | S100 |
| Последняя страница | S102 |
| Аффилиация | A B Chen; Dept. of Phys., Auburn Univ., AL, USA |
| Аффилиация | Y M Lai-Hsu; Dept. of Phys., Auburn Univ., AL, USA |
| Аффилиация | S Krishnamurthy; Dept. of Phys., Auburn Univ., AL, USA |
| Аффилиация | M A Berding; Dept. of Phys., Auburn Univ., AL, USA |
| Выпуск | 3S |
