| Автор | J Brunner |
| Автор | R A Stradling |
| Автор | I T Ferguson |
| Автор | E A Johnson |
| Автор | A McKinnon |
| Автор | F Coppinger |
| Автор | A Rivers |
| Автор | F Koch |
| Дата выпуска | 1991-10-01 |
| dc.description | Resonant interband tunnelling through doping barriers in homoepitaxial InSb is observed. The band structures for the chosen doping profiles are calculated self-consistently including non-parabolicity effects. A p<sup>+</sup>- delta p<sup>+</sup>-i-n<sup>+</sup>-i- delta p<sup>+</sup>-p<sup>+</sup> doping structure is designed to create a two-dimensional triangular inversion well between two degenerate p-type slab layers. Holes in the p-type layer then tunnel resonantly through the two-dimensional occupied electron states of the n<sup>+</sup>-induced well into the collector on the other side. These structures exhibit symmetric negative differential resistance (NDR) with peak-to-valley ratios of 1.6 and peak current densities of 120 A cm<sup>-2</sup> at 4.2 K. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Resonant interband tunnelling in homoepitaxial InSb structures with inversion barriers |
| Тип | paper |
| DOI | 10.1088/0268-1242/6/10/013 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 6 |
| Первая страница | 1025 |
| Последняя страница | 1028 |
| Аффилиация | J Brunner; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | R A Stradling; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | I T Ferguson; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | E A Johnson; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | A McKinnon; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | F Coppinger; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | A Rivers; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | F Koch; Imperial Coll. of Sci., Technol. & Med., London, UK |
| Выпуск | 10 |
