Metal-organic molecular beam epitaxy of GaAs and Ga<sub>0.5</sub>In<sub>0.5</sub>P
P Maurel; Ph Bove; J C Garcia; C Grattepain; P Maurel; Lab. Central de Recherches, Thomson CSF, Orsay, France; Ph Bove; Lab. Central de Recherches, Thomson CSF, Orsay, France; J C Garcia; Lab. Central de Recherches, Thomson CSF, Orsay, France; C Grattepain; Lab. Central de Recherches, Thomson CSF, Orsay, France
Журнал:
Semiconductor Science and Technology
Дата:
1991-04-01
Аннотация:
High-quality GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P heterostructures have been grown by metal-organic molecular beam epitaxy, using both triethylgallium and trimethylindium as group III element sources and arsine and phosphine as group V element sources. Both hydride and hydrogen flow rates have been found to have a significant effect on the growth rate of the layers. GaAs bulk layers show p-type conductivity with carbon as a residual impurity. Minimum carbon incorporation is found at around 500 degrees C. The purity of the epilayers is also sensitive to the purity of the organometallic starting material. Ga<sub>0.5</sub>In<sub>0.5</sub>P bulk layers show optimum structural properties at a growth temperature of 520 degrees C. Full width at half maximum of GaInP (400) reflection peaks as low as 15" have been found. GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P multiquantum well structures with wells as thin as 10 AA and confinement energy exceeding 300 meV have also been grown.
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