Автор |
P Maurel |
Автор |
Ph Bove |
Автор |
J C Garcia |
Автор |
C Grattepain |
Дата выпуска |
1991-04-01 |
dc.description |
High-quality GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P heterostructures have been grown by metal-organic molecular beam epitaxy, using both triethylgallium and trimethylindium as group III element sources and arsine and phosphine as group V element sources. Both hydride and hydrogen flow rates have been found to have a significant effect on the growth rate of the layers. GaAs bulk layers show p-type conductivity with carbon as a residual impurity. Minimum carbon incorporation is found at around 500 degrees C. The purity of the epilayers is also sensitive to the purity of the organometallic starting material. Ga<sub>0.5</sub>In<sub>0.5</sub>P bulk layers show optimum structural properties at a growth temperature of 520 degrees C. Full width at half maximum of GaInP (400) reflection peaks as low as 15" have been found. GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P multiquantum well structures with wells as thin as 10 AA and confinement energy exceeding 300 meV have also been grown. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Metal-organic molecular beam epitaxy of GaAs and Ga<sub>0.5</sub>In<sub>0.5</sub>P |
Тип |
paper |
DOI |
10.1088/0268-1242/6/4/005 |
Electronic ISSN |
1361-6641 |
Print ISSN |
0268-1242 |
Журнал |
Semiconductor Science and Technology |
Том |
6 |
Первая страница |
254 |
Последняя страница |
260 |
Аффилиация |
P Maurel; Lab. Central de Recherches, Thomson CSF, Orsay, France |
Аффилиация |
Ph Bove; Lab. Central de Recherches, Thomson CSF, Orsay, France |
Аффилиация |
J C Garcia; Lab. Central de Recherches, Thomson CSF, Orsay, France |
Аффилиация |
C Grattepain; Lab. Central de Recherches, Thomson CSF, Orsay, France |
Выпуск |
4 |