| Автор | P Maurel |
| Автор | Ph Bove |
| Автор | J C Garcia |
| Автор | C Grattepain |
| Дата выпуска | 1991-04-01 |
| dc.description | High-quality GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P heterostructures have been grown by metal-organic molecular beam epitaxy, using both triethylgallium and trimethylindium as group III element sources and arsine and phosphine as group V element sources. Both hydride and hydrogen flow rates have been found to have a significant effect on the growth rate of the layers. GaAs bulk layers show p-type conductivity with carbon as a residual impurity. Minimum carbon incorporation is found at around 500 degrees C. The purity of the epilayers is also sensitive to the purity of the organometallic starting material. Ga<sub>0.5</sub>In<sub>0.5</sub>P bulk layers show optimum structural properties at a growth temperature of 520 degrees C. Full width at half maximum of GaInP (400) reflection peaks as low as 15" have been found. GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P multiquantum well structures with wells as thin as 10 AA and confinement energy exceeding 300 meV have also been grown. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Metal-organic molecular beam epitaxy of GaAs and Ga<sub>0.5</sub>In<sub>0.5</sub>P |
| Тип | paper |
| DOI | 10.1088/0268-1242/6/4/005 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 6 |
| Первая страница | 254 |
| Последняя страница | 260 |
| Аффилиация | P Maurel; Lab. Central de Recherches, Thomson CSF, Orsay, France |
| Аффилиация | Ph Bove; Lab. Central de Recherches, Thomson CSF, Orsay, France |
| Аффилиация | J C Garcia; Lab. Central de Recherches, Thomson CSF, Orsay, France |
| Аффилиация | C Grattepain; Lab. Central de Recherches, Thomson CSF, Orsay, France |
| Выпуск | 4 |
