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Автор P Maurel
Автор Ph Bove
Автор J C Garcia
Автор C Grattepain
Дата выпуска 1991-04-01
dc.description High-quality GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P heterostructures have been grown by metal-organic molecular beam epitaxy, using both triethylgallium and trimethylindium as group III element sources and arsine and phosphine as group V element sources. Both hydride and hydrogen flow rates have been found to have a significant effect on the growth rate of the layers. GaAs bulk layers show p-type conductivity with carbon as a residual impurity. Minimum carbon incorporation is found at around 500 degrees C. The purity of the epilayers is also sensitive to the purity of the organometallic starting material. Ga<sub>0.5</sub>In<sub>0.5</sub>P bulk layers show optimum structural properties at a growth temperature of 520 degrees C. Full width at half maximum of GaInP (400) reflection peaks as low as 15" have been found. GaAs/Ga<sub>0.5</sub>In<sub>0.5</sub>P multiquantum well structures with wells as thin as 10 AA and confinement energy exceeding 300 meV have also been grown.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Metal-organic molecular beam epitaxy of GaAs and Ga<sub>0.5</sub>In<sub>0.5</sub>P
Тип paper
DOI 10.1088/0268-1242/6/4/005
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 6
Первая страница 254
Последняя страница 260
Аффилиация P Maurel; Lab. Central de Recherches, Thomson CSF, Orsay, France
Аффилиация Ph Bove; Lab. Central de Recherches, Thomson CSF, Orsay, France
Аффилиация J C Garcia; Lab. Central de Recherches, Thomson CSF, Orsay, France
Аффилиация C Grattepain; Lab. Central de Recherches, Thomson CSF, Orsay, France
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