| Автор | M P Houng |
| Автор | Y H Wang |
| Автор | H C Wei |
| Дата выпуска | 1991-09-01 |
| dc.description | AlGaAs/GaAs heterojunction resonant tunnelling bipolar transistors, with superlattice base, have been fabricated. For the single heterojunction structure an S-shaped NDR behaviour can be obtained when it is forward biased, due to the impact ionization enhancement in the AlGaAs/GaAs heterojunction. While it is reverse biased an N-shaped NDR behaviour comes after an insignificant S-shaped behaviour. It is believed to be the initiation of a resonant tunnelling process across the superlattice region. As for the double heterojunction structure, the I-V characteristic shows a bi-directional S-shaped switching behaviour. The different performance between the two structures can be modelled as the effect of the band offset of the heterojunction. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The effect of band offset on the negative differential resistance characteristics of GaAs resonant tunnelling devices |
| Тип | paper |
| DOI | 10.1088/0268-1242/6/9/009 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 6 |
| Первая страница | 886 |
| Последняя страница | 889 |
| Аффилиация | M P Houng; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan |
| Аффилиация | Y H Wang; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan |
| Аффилиация | H C Wei; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan |
| Выпуск | 9 |
