Trap recharging waves in Si(Tl)
B I Fuks; G I Oreshkin; O V Sellyakhova; B I Fuks; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, Russia; G I Oreshkin; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, Russia; O V Sellyakhova; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, Russia
Журнал:
Semiconductor Science and Technology
Дата:
1992-12-01
Аннотация:
This paper discusses large low-frequency oscillations of the equivalent capacitance C( omega ) due to geometrical resonances of trap recharging waves in the bulk of Si(Tl, P) samples. Computer processing of the C( omega ) dependences provides a non-destructive determination of the dopant distribution throughout the sample.
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