| Автор | B I Fuks |
| Автор | G I Oreshkin |
| Автор | O V Sellyakhova |
| Дата выпуска | 1992-12-01 |
| dc.description | This paper discusses large low-frequency oscillations of the equivalent capacitance C( omega ) due to geometrical resonances of trap recharging waves in the bulk of Si(Tl, P) samples. Computer processing of the C( omega ) dependences provides a non-destructive determination of the dopant distribution throughout the sample. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Trap recharging waves in Si(Tl) |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/12/005 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | 1453 |
| Последняя страница | 1455 |
| Аффилиация | B I Fuks; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, Russia |
| Аффилиация | G I Oreshkin; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, Russia |
| Аффилиация | O V Sellyakhova; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, Russia |
| Выпуск | 12 |
