Doping dependence of the ultrafast thermalization and relaxation of highly photoexcited carriers in bulk polar semiconductors
U Hohenester; P Supancic; P Kocevar; X Q Zhou; U Lemmer; G C Cho; W Kutt; H Kurz; U Hohenester; Inst. fur Theor. Phys., Graz Univ., Austria; P Supancic; Inst. fur Theor. Phys., Graz Univ., Austria; P Kocevar; Inst. fur Theor. Phys., Graz Univ., Austria; X Q Zhou; Inst. fur Theor. Phys., Graz Univ., Austria; U Lemmer; Inst. fur Theor. Phys., Graz Univ., Austria; G C Cho; Inst. fur Theor. Phys., Graz Univ., Austria; W Kutt; Inst. fur Theor. Phys., Graz Univ., Austria; H Kurz; Inst. fur Theor. Phys., Graz Univ., Austria
Журнал:
Semiconductor Science and Technology
Дата:
1992-03-01
Аннотация:
Subpicosecond luminescence and transmission spectroscopy for a broad range of doping and optical excitation densities are used for a systematic study of thermalization and energy relaxation of highly photoexcited electrons and holes in bulk intrinsic, n- and p-doped GaAs and InP at room temperature. The measurements are complemented by an ensemble-Monte-Carlo analysis, including non-equilibrium phonons and plasmons as well as electron degeneracy.
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