Автор |
U Hohenester |
Автор |
P Supancic |
Автор |
P Kocevar |
Автор |
X Q Zhou |
Автор |
U Lemmer |
Автор |
G C Cho |
Автор |
W Kutt |
Автор |
H Kurz |
Дата выпуска |
1992-03-01 |
dc.description |
Subpicosecond luminescence and transmission spectroscopy for a broad range of doping and optical excitation densities are used for a systematic study of thermalization and energy relaxation of highly photoexcited electrons and holes in bulk intrinsic, n- and p-doped GaAs and InP at room temperature. The measurements are complemented by an ensemble-Monte-Carlo analysis, including non-equilibrium phonons and plasmons as well as electron degeneracy. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Doping dependence of the ultrafast thermalization and relaxation of highly photoexcited carriers in bulk polar semiconductors |
Тип |
paper |
DOI |
10.1088/0268-1242/7/3B/043 |
Electronic ISSN |
1361-6641 |
Print ISSN |
0268-1242 |
Журнал |
Semiconductor Science and Technology |
Том |
7 |
Первая страница |
B176 |
Последняя страница |
B179 |
Аффилиация |
U Hohenester; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
P Supancic; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
P Kocevar; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
X Q Zhou; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
U Lemmer; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
G C Cho; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
W Kutt; Inst. fur Theor. Phys., Graz Univ., Austria |
Аффилиация |
H Kurz; Inst. fur Theor. Phys., Graz Univ., Austria |
Выпуск |
3B |