| Автор | M W Dellow |
| Автор | P H Beton |
| Автор | P C Main |
| Автор | T J Foster |
| Автор | L Eaves |
| Автор | A F Jezierski |
| Автор | W Kool |
| Автор | M Henini |
| Автор | S P Beaumont |
| Автор | C D W Wilkinson |
| Дата выпуска | 1992-03-01 |
| dc.description | The authors have investigated the I(V) characteristics of a GaAs/(AlGa)As resonant tunnelling diode in which the effective cross-sectional area, A, may be varied using a gate. As A is progressively reduced I(V) becomes asymmetric. In particular the peak to valley ratio in forward bias is decreased from a value approximately=20 to approximately=1, but in reverse bias remains constant at approximately=20. They propose that this arises from a lateral variation of the voltage drop across the tunnel barriers which leads to a smearing of the resonance. As A is reduced they also observe additional maxima and minima in I(V). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Asymmetry in the I(V) characteristics of a gated resonant tunnelling diode |
| Тип | paper |
| DOI | 10.1088/0268-1242/7/3B/114 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 7 |
| Первая страница | B442 |
| Последняя страница | B445 |
| Аффилиация | M W Dellow; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | P H Beton; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | P C Main; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | T J Foster; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | L Eaves; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | A F Jezierski; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | W Kool; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | M Henini; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | S P Beaumont; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | C D W Wilkinson; Dept. of Phys., Nottingham Univ., UK |
| Выпуск | 3B |
