The characterization of semiconductive TlBiSe₂ thin films by the use of electron microscopy and infrared spectroscopy is presented. It was determined that the deposition conditions profoundly influence the microstructure and surface quality of the as-grown films, consequently affecting their electronic properties such as the free-carrier mobility, the amount of band edge tailing and the value of the optical energy gap. The results show that these two techniques are a very useful combination in material characterization.