| Автор | C L Mitsas |
| Автор | E K Polychroniadis |
| Автор | D I Siapkas |
| Дата выпуска | 1993-01-01 |
| dc.description | The characterization of semiconductive TlBiSe<sub>2</sub> thin films by the use of electron microscopy and infrared spectroscopy is presented. It was determined that the deposition conditions profoundly influence the microstructure and surface quality of the as-grown films, consequently affecting their electronic properties such as the free-carrier mobility, the amount of band edge tailing and the value of the optical energy gap. The results show that these two techniques are a very useful combination in material characterization. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Structural dependence of the optical absorption in TlBiSe<sub>2</sub> thin films near the fundamental absorption edge |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/1S/080 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | S356 |
| Последняя страница | S359 |
| Аффилиация | C L Mitsas; Dept. of Phys., Thessaloniki Univ., Greece |
| Аффилиация | E K Polychroniadis; Dept. of Phys., Thessaloniki Univ., Greece |
| Аффилиация | D I Siapkas; Dept. of Phys., Thessaloniki Univ., Greece |
| Выпуск | 1S |
