| Автор | P J van der Wel |
| Автор | J te Nijenhuis |
| Автор | L J Giling |
| Дата выпуска | 1993-03-01 |
| dc.description | Misfit dislocations in strained GaAs/(In,Ga)As heterostructures have been studied by high-resolution optical beam induced current (OBIC) imaging. A decrease of the OBIC signal is observed when the focused laser beam crosses a dislocation line. The OBIC contrast is calculated by solving the diffusion equation in a two-dimensional system perpendicular to the misfit dislocation lines. It is shown that the calculated OBIC contrast is in qualitative agreement with the experimental signal when it is assumed that a local increase of recombination rate is present around the dislocation lines. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Two-dimensional model for OBIC studies on misfit dislocations in GaAs-(In,Ga)As heterostructures |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/3/017 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | 403 |
| Последняя страница | 408 |
| Аффилиация | P J van der Wel; Res. Inst. for Mater., Nijmegen Univ., Netherlands |
| Аффилиация | J te Nijenhuis; Res. Inst. for Mater., Nijmegen Univ., Netherlands |
| Аффилиация | L J Giling; Res. Inst. for Mater., Nijmegen Univ., Netherlands |
| Выпуск | 3 |
