Control of terrace width and atomic step distribution on vicinal Si(111) surfaces by thermal processing
J D O'Mahony; J F McGilp; F M Leibsle; P Weightman; C F J Flipse; J D O'Mahony; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland; J F McGilp; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland; F M Leibsle; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland; P Weightman; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland; C F J Flipse; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland
Журнал:
Semiconductor Science and Technology
Дата:
1993-04-01
Аннотация:
Si(111) surfaces misoriented by 4 degrees towards (112) have been studied by scanning tunnelling microscopy. Topographs of surfaces, produced by annealing, followed by rapid quenching, reveal a temperature-dependent transition from a structure consisting of wide irregular terraces separated by small irregular clusters of double steps to a single highly ordered phase of narrow, evenly spaced terraces separated by single monatomic steps. The quenched-in phases are stable at room temperature.
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