| Автор | J D O'Mahony |
| Автор | J F McGilp |
| Автор | F M Leibsle |
| Автор | P Weightman |
| Автор | C F J Flipse |
| Дата выпуска | 1993-04-01 |
| dc.description | Si(111) surfaces misoriented by 4 degrees towards (112) have been studied by scanning tunnelling microscopy. Topographs of surfaces, produced by annealing, followed by rapid quenching, reveal a temperature-dependent transition from a structure consisting of wide irregular terraces separated by small irregular clusters of double steps to a single highly ordered phase of narrow, evenly spaced terraces separated by single monatomic steps. The quenched-in phases are stable at room temperature. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Control of terrace width and atomic step distribution on vicinal Si(111) surfaces by thermal processing |
| Тип | paper |
| DOI | 10.1088/0268-1242/8/4/003 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 8 |
| Первая страница | 495 |
| Последняя страница | 501 |
| Аффилиация | J D O'Mahony; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland |
| Аффилиация | J F McGilp; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland |
| Аффилиация | F M Leibsle; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland |
| Аффилиация | P Weightman; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland |
| Аффилиация | C F J Flipse; Dept. of Pure & Appl. Phys., Trinity Coll., Dublin, Ireland |
| Выпуск | 4 |
