2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg<sub>1-x</sub>Cd<sub>x</sub>Te (0.2<x<or=0.3)
A Jaeger; W Hoerstel; M Thiede; P Schafer; J Elsing; A Jaeger; Fac. Phys., Humboldt-Univ., Berlin, Germany; W Hoerstel; Fac. Phys., Humboldt-Univ., Berlin, Germany; M Thiede; Fac. Phys., Humboldt-Univ., Berlin, Germany; P Schafer; Fac. Phys., Humboldt-Univ., Berlin, Germany; J Elsing; Fac. Phys., Humboldt-Univ., Berlin, Germany
Журнал:
Semiconductor Science and Technology
Дата:
1994-01-01
Аннотация:
The inversion channel of metal-insulator (Al<sub>2</sub>O<sub>3</sub>) semiconductor (p-Hg<sub>1-x</sub>Cd<sub>x</sub>Te) field effect transistors was investigated by the Shubnikov-de Haas (SdH) effect as well as by classical magnetoresistance measurements. Observation of the SdH effect enables us to determine the dielectric constant of the oxide ( epsilon <sub>r</sub>=10.9+or-1.0) and provides evidence of two occupied subbands (i=0, 1) with an effective electron mass ratio m<sub>0</sub>/m<sub>1</sub> approximately=2. From tilted magnetic field experiments an enhanced effective g-factor g*(x=0.3)=-65 in the lowest Landau level of the lowest subband was estimated. The maximum channel mobility mu <sub>max</sub>(4.2K)=3000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> is limited by alloy inhomogeneities and interface roughness.
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