| Автор | A Jaeger |
| Автор | W Hoerstel |
| Автор | M Thiede |
| Автор | P Schafer |
| Автор | J Elsing |
| Дата выпуска | 1994-01-01 |
| dc.description | The inversion channel of metal-insulator (Al<sub>2</sub>O<sub>3</sub>) semiconductor (p-Hg<sub>1-x</sub>Cd<sub>x</sub>Te) field effect transistors was investigated by the Shubnikov-de Haas (SdH) effect as well as by classical magnetoresistance measurements. Observation of the SdH effect enables us to determine the dielectric constant of the oxide ( epsilon <sub>r</sub>=10.9+or-1.0) and provides evidence of two occupied subbands (i=0, 1) with an effective electron mass ratio m<sub>0</sub>/m<sub>1</sub> approximately=2. From tilted magnetic field experiments an enhanced effective g-factor g*(x=0.3)=-65 in the lowest Landau level of the lowest subband was estimated. The maximum channel mobility mu <sub>max</sub>(4.2K)=3000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> is limited by alloy inhomogeneities and interface roughness. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg<sub>1-x</sub>Cd<sub>x</sub>Te (0.2<x<or=0.3) |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/1/010 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 54 |
| Последняя страница | 60 |
| Аффилиация | A Jaeger; Fac. Phys., Humboldt-Univ., Berlin, Germany |
| Аффилиация | W Hoerstel; Fac. Phys., Humboldt-Univ., Berlin, Germany |
| Аффилиация | M Thiede; Fac. Phys., Humboldt-Univ., Berlin, Germany |
| Аффилиация | P Schafer; Fac. Phys., Humboldt-Univ., Berlin, Germany |
| Аффилиация | J Elsing; Fac. Phys., Humboldt-Univ., Berlin, Germany |
| Выпуск | 1 |
