Contactless local determination of recombination centre parameters in Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te by infrared laser interferometry
A B Fedortsov; D G Letenko; A Y Polyakov; V I Stafeev; L E Vorobyev; A B Fedortsov; North-West Polytech. Inst., St. Petersburg, Russia; D G Letenko; North-West Polytech. Inst., St. Petersburg, Russia; A Y Polyakov; North-West Polytech. Inst., St. Petersburg, Russia; V I Stafeev; North-West Polytech. Inst., St. Petersburg, Russia; L E Vorobyev; North-West Polytech. Inst., St. Petersburg, Russia
Журнал:
Semiconductor Science and Technology
Дата:
1994-01-01
Аннотация:
We describe a method, and the results thereof, for contactless local determination of the excitation energy of recombination centres, their concentration, and the electron and hole capture coefficients in Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te. The method suggested is based on analysis of the experimental temperature dependence of electron and hole lifetimes obtained by infrared laser interferometry.
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