| Автор | A B Fedortsov |
| Автор | D G Letenko |
| Автор | A Y Polyakov |
| Автор | V I Stafeev |
| Автор | L E Vorobyev |
| Дата выпуска | 1994-01-01 |
| dc.description | We describe a method, and the results thereof, for contactless local determination of the excitation energy of recombination centres, their concentration, and the electron and hole capture coefficients in Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te. The method suggested is based on analysis of the experimental temperature dependence of electron and hole lifetimes obtained by infrared laser interferometry. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Contactless local determination of recombination centre parameters in Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te by infrared laser interferometry |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/1/012 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 69 |
| Последняя страница | 76 |
| Аффилиация | A B Fedortsov; North-West Polytech. Inst., St. Petersburg, Russia |
| Аффилиация | D G Letenko; North-West Polytech. Inst., St. Petersburg, Russia |
| Аффилиация | A Y Polyakov; North-West Polytech. Inst., St. Petersburg, Russia |
| Аффилиация | V I Stafeev; North-West Polytech. Inst., St. Petersburg, Russia |
| Аффилиация | L E Vorobyev; North-West Polytech. Inst., St. Petersburg, Russia |
| Выпуск | 1 |
