| Автор | A Chergui |
| Автор | J Valenta |
| Автор | J L Loison |
| Автор | M Robino |
| Автор | I Pelant |
| Автор | J B Grun |
| Автор | R Levy |
| Автор | O Briot |
| Автор | R L Aulombard |
| Дата выпуска | 1994-11-02 |
| dc.description | Different ZnSe/GaAs epilayers prepared by low-pressure metal organic vapour-phase epitaxy under the conditions given by Nurmikko and Gunshor (1993 Physica B 185 16) are studied through their low-temperature transmission, reflection and photoluminescence spectra. Several samples are etched out from their GaAs substrate and the properties of as-grown surfaces and etched surfaces are compared. The etched samples seem to be free of in-plane strain and to behave like bulk ZnSe. The free-exciton excited state (n=2) is clearly observed in transmission, reflection and luminescence spectra. We also studied the thermal quenching of the photoluminescence in order to confirm the origin of some bound-exciton centres. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/11/007 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 2073 |
| Последняя страница | 2079 |
| Аффилиация | A Chergui; CNRS, Strasbourg, France |
| Аффилиация | J Valenta; CNRS, Strasbourg, France |
| Аффилиация | J L Loison; CNRS, Strasbourg, France |
| Аффилиация | M Robino; CNRS, Strasbourg, France |
| Аффилиация | I Pelant; CNRS, Strasbourg, France |
| Аффилиация | J B Grun; CNRS, Strasbourg, France |
| Аффилиация | R Levy; CNRS, Strasbourg, France |
| Аффилиация | O Briot; CNRS, Strasbourg, France |
| Аффилиация | R L Aulombard; CNRS, Strasbourg, France |
| Выпуск | 11 |
