A new approach to the hot-phonon effect on carrier cooling in GaAs
X Q Zhou; W W Ruhle; P Schullatz; P Kocevar; H M van Driel; K Ploog; X Q Zhou; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; W W Ruhle; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; P Schullatz; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; P Kocevar; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; H M van Driel; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany; K Ploog; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Журнал:
Semiconductor Science and Technology
Дата:
1994-05-01
Аннотация:
We performed a novel experiment to directly observe the influence of non-equilibrium optical phonons on the cooling rate of hot carriers in GaAs grown at low temperature by molecular beam epitaxy. Hot carriers in this material recombine in 1 ps leaving behind only non-equilibrium optical phonons, which reduce strongly the cooling rate of hot carriers generated within the phonon lifetime. Our experiments rule out a noticeable role for plasmon-phonon coupling and related effects of free-carrier screening. Monte Carlo simulations confirm the dominant contribution of the hot-phonon effect for the reduction of carrier cooling rate.
233.0Кб