| Автор | X Q Zhou |
| Автор | W W Ruhle |
| Автор | P Schullatz |
| Автор | P Kocevar |
| Автор | H M van Driel |
| Автор | K Ploog |
| Дата выпуска | 1994-05-01 |
| dc.description | We performed a novel experiment to directly observe the influence of non-equilibrium optical phonons on the cooling rate of hot carriers in GaAs grown at low temperature by molecular beam epitaxy. Hot carriers in this material recombine in 1 ps leaving behind only non-equilibrium optical phonons, which reduce strongly the cooling rate of hot carriers generated within the phonon lifetime. Our experiments rule out a noticeable role for plasmon-phonon coupling and related effects of free-carrier screening. Monte Carlo simulations confirm the dominant contribution of the hot-phonon effect for the reduction of carrier cooling rate. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A new approach to the hot-phonon effect on carrier cooling in GaAs |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/5S/081 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 704 |
| Последняя страница | 706 |
| Аффилиация | X Q Zhou; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany |
| Аффилиация | W W Ruhle; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany |
| Аффилиация | P Schullatz; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany |
| Аффилиация | P Kocevar; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany |
| Аффилиация | H M van Driel; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany |
| Аффилиация | K Ploog; Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany |
| Выпуск | 5S |
