In multilevel interconnection processes, because thermal stress affects device characteristics and wiring reliability, low-temperature deposition has been required for interlayer dielectrics (SiO₂). This research investigated high growth rate and selective growth conditions of room-temperature interlayer dielectrics formed using the liquid-phase deposition method. The dependence of deposition rate on growth temperature and H₃BO₃ concentration is confirmed, and a concentration of 3.8 mol 1^-1 of H₂SiF₆ is used to achieve a high deposition rate of 1250 AA h^-1. The degree of supersaturation of silica of the immersing solution is found to define three ranges of growth conditions: the non-deposition range, selective deposition range, and conformal deposition range. A selective deposition model is proposed to clarify the mechanism of room-temperature selective SiO₂ growth.