| Автор | Ching-Fa Yeh |
| Автор | Chun-Lin Chen |
| Дата выпуска | 1994-06-01 |
| dc.description | In multilevel interconnection processes, because thermal stress affects device characteristics and wiring reliability, low-temperature deposition has been required for interlayer dielectrics (SiO<sub>2</sub>). This research investigated high growth rate and selective growth conditions of room-temperature interlayer dielectrics formed using the liquid-phase deposition method. The dependence of deposition rate on growth temperature and H<sub>3</sub>BO<sub>3</sub> concentration is confirmed, and a concentration of 3.8 mol 1<sup>-1</sup> of H<sub>2</sub>SiF<sub>6</sub> is used to achieve a high deposition rate of 1250 AA h<sup>-1</sup>. The degree of supersaturation of silica of the immersing solution is found to define three ranges of growth conditions: the non-deposition range, selective deposition range, and conformal deposition range. A selective deposition model is proposed to clarify the mechanism of room-temperature selective SiO<sub>2</sub> growth. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Room-temperature selective growth of dielectric films by liquid-phase deposition |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/6/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 1250 |
| Последняя страница | 1254 |
| Аффилиация | Ching-Fa Yeh; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan |
| Аффилиация | Chun-Lin Chen; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan |
| Выпуск | 6 |
