Gated non-local magnetoresistance measurement in a GaAs/AlGaAs heterostructure
N F Deutscher; J M Ryan; D K Ferry; N F Deutscher; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA; J M Ryan; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA; D K Ferry; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Журнал:
Semiconductor Science and Technology
Дата:
1994-07-01
Аннотация:
We have made non-local measurements of a two-dimensional electron gas (2DEG) formed at the interface of a GaAs/Ga<sub>x</sub>Al<sub>1-x</sub>As heterojunction. The magnetoresistance was measured on a standard Hall bar that had a gate placed between the current and voltage probes. We observed non-local resistance peaks at the location of the Shubnikov-de Haas oscillation maxima. The magnitude of these peaks depends on the gate voltage applied to the semiconductor between the current and voltage probes. We also observe 'Aharanov-Bohm'-like oscillations, presumably due to a localized impurity near the gate.
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