Автор |
N F Deutscher |
Автор |
J M Ryan |
Автор |
D K Ferry |
Дата выпуска |
1994-07-01 |
dc.description |
We have made non-local measurements of a two-dimensional electron gas (2DEG) formed at the interface of a GaAs/Ga<sub>x</sub>Al<sub>1-x</sub>As heterojunction. The magnetoresistance was measured on a standard Hall bar that had a gate placed between the current and voltage probes. We observed non-local resistance peaks at the location of the Shubnikov-de Haas oscillation maxima. The magnitude of these peaks depends on the gate voltage applied to the semiconductor between the current and voltage probes. We also observe 'Aharanov-Bohm'-like oscillations, presumably due to a localized impurity near the gate. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Gated non-local magnetoresistance measurement in a GaAs/AlGaAs heterostructure |
Тип |
paper |
DOI |
10.1088/0268-1242/9/7/009 |
Electronic ISSN |
1361-6641 |
Print ISSN |
0268-1242 |
Журнал |
Semiconductor Science and Technology |
Том |
9 |
Первая страница |
1354 |
Последняя страница |
1357 |
Аффилиация |
N F Deutscher; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA |
Аффилиация |
J M Ryan; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA |
Аффилиация |
D K Ferry; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA |
Выпуск |
7 |