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Автор N F Deutscher
Автор J M Ryan
Автор D K Ferry
Дата выпуска 1994-07-01
dc.description We have made non-local measurements of a two-dimensional electron gas (2DEG) formed at the interface of a GaAs/Ga<sub>x</sub>Al<sub>1-x</sub>As heterojunction. The magnetoresistance was measured on a standard Hall bar that had a gate placed between the current and voltage probes. We observed non-local resistance peaks at the location of the Shubnikov-de Haas oscillation maxima. The magnitude of these peaks depends on the gate voltage applied to the semiconductor between the current and voltage probes. We also observe 'Aharanov-Bohm'-like oscillations, presumably due to a localized impurity near the gate.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Gated non-local magnetoresistance measurement in a GaAs/AlGaAs heterostructure
Тип paper
DOI 10.1088/0268-1242/9/7/009
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 9
Первая страница 1354
Последняя страница 1357
Аффилиация N F Deutscher; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Аффилиация J M Ryan; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Аффилиация D K Ferry; Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
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