The controlled disordering of quantum wells using surface oxidation
S Shi; P L K Wa; A Miller; J Pamulapati; P Cooke; M Dutta; S Shi; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA; P L K Wa; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA; A Miller; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA; J Pamulapati; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA; P Cooke; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA; M Dutta; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Журнал:
Semiconductor Science and Technology
Дата:
1994-08-01
Аннотация:
A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.
266.8Кб