| Автор | S Shi |
| Автор | P L K Wa |
| Автор | A Miller |
| Автор | J Pamulapati |
| Автор | P Cooke |
| Автор | M Dutta |
| Дата выпуска | 1994-08-01 |
| dc.description | A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The controlled disordering of quantum wells using surface oxidation |
| Тип | paper |
| DOI | 10.1088/0268-1242/9/8/021 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 9 |
| Первая страница | 1564 |
| Последняя страница | 1566 |
| Аффилиация | S Shi; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Аффилиация | P L K Wa; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Аффилиация | A Miller; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Аффилиация | J Pamulapati; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Аффилиация | P Cooke; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Аффилиация | M Dutta; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA |
| Выпуск | 8 |
