Observation of strong influence of lattice imperfections on the electron-electron and electron-phonon scattering in potassium
R J M van Vucht; G F A van de Walle; H van Kempen; P Wyder; R J M van Vucht; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands; G F A van de Walle; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands; H van Kempen; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands; P Wyder; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands
Журнал:
Journal of Physics F: Metal Physics
Дата:
1982-11-01
Аннотация:
The authors have measured the influence of dislocations on the electron-electron and electron-phonon contributions to the low-temperature electrical resistivity of potassium. At low temperatures, they deformed the samples by torsion to introduce lattice imperfections in a controlled way. They found that the presence of dislocations enhanced the electron-electron term, making it five times stronger than expected, and that also the electron-phonon term increased by up to a factor of two.
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