| Автор | R J M van Vucht |
| Автор | G F A van de Walle |
| Автор | H van Kempen |
| Автор | P Wyder |
| Дата выпуска | 1982-11-01 |
| dc.description | The authors have measured the influence of dislocations on the electron-electron and electron-phonon contributions to the low-temperature electrical resistivity of potassium. At low temperatures, they deformed the samples by torsion to introduce lattice imperfections in a controlled way. They found that the presence of dislocations enhanced the electron-electron term, making it five times stronger than expected, and that also the electron-phonon term increased by up to a factor of two. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Observation of strong influence of lattice imperfections on the electron-electron and electron-phonon scattering in potassium |
| Тип | lett |
| DOI | 10.1088/0305-4608/12/11/003 |
| Print ISSN | 0305-4608 |
| Журнал | Journal of Physics F: Metal Physics |
| Том | 12 |
| Первая страница | L217 |
| Последняя страница | L221 |
| Аффилиация | R J M van Vucht; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Аффилиация | G F A van de Walle; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Аффилиация | H van Kempen; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Аффилиация | P Wyder; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Выпуск | 11 |
