The tracer diffusion of Ge in Ni single crystals
S Mantl; S J Rothman; L J Nowicki; J L Lerner; S Mantl; Argonne Nat. Lab., Argonne, IL, USA; S J Rothman; Argonne Nat. Lab., Argonne, IL, USA; L J Nowicki; Argonne Nat. Lab., Argonne, IL, USA; J L Lerner; Argonne Nat. Lab., Argonne, IL, USA
Журнал:
Journal of Physics F: Metal Physics
Дата:
1983-07-01
Аннотация:
The diffusion of <sup>68</sup>Ge in single crystals of high-purity (over 99.99% pure) Ni has been measured using the sectioning technique. The plot of log D versus 1/T is straight from 939 to 1675K, over 6<sup>1</sup>/<sub>2</sub> orders of magnitude in D, with parameters D<sub>0</sub>=2.10+or-0.47 cm<sup>2</sup> s<sup>-1</sup>, Q=2.74+or-0.03 eV (264+or-3 kJ mol<sup>-1</sup>). The data suggest a low Ge-vacancy binding enthalpy for Ni.
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