The low-temperature electrical resistivity of bismuth
C A Kukkonen; K F Sohn; C A Kukkonen; Dept. of Phys., Purdue Univ., West Lafayette, IN, USA; K F Sohn; Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
Журнал:
Journal of Physics F: Metal Physics
Дата:
1977-07-01
Аннотация:
Reports a detailed and precise measurement of the temperature dependence of the electrical resistivity of bismuth in the region 1.1<T<100K. Below 1.5K the authors have found a surprising departure from the previously observed T<sup>2</sup> behaviour. Many proposals have been advanced to explain the observed low-temperature resistivity but no single mechanism is found to be compelling. Experiments at lower temperatures and a comprehensive theory of the resistivity are needed.
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