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Автор C A Kukkonen
Автор K F Sohn
Дата выпуска 1977-07-01
dc.description Reports a detailed and precise measurement of the temperature dependence of the electrical resistivity of bismuth in the region 1.1<T<100K. Below 1.5K the authors have found a surprising departure from the previously observed T<sup>2</sup> behaviour. Many proposals have been advanced to explain the observed low-temperature resistivity but no single mechanism is found to be compelling. Experiments at lower temperatures and a comprehensive theory of the resistivity are needed.
Формат application.pdf
Издатель Institute of Physics Publishing
Название The low-temperature electrical resistivity of bismuth
Тип lett
DOI 10.1088/0305-4608/7/7/007
Print ISSN 0305-4608
Журнал Journal of Physics F: Metal Physics
Том 7
Первая страница L193
Последняя страница L198
Аффилиация C A Kukkonen; Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
Аффилиация K F Sohn; Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
Выпуск 7

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