Crystal wafer orientation by proton channelling
G Dearnaley; M A Wilkins; G Dearnaley; Nuclear Physics Division, Atomic Energy Research Establishment, Harwell; M A Wilkins; Nuclear Physics Division, Atomic Energy Research Establishment, Harwell
Журнал:
Journal of Scientific Instruments
Дата:
1967-10-01
Аннотация:
Proton channelling has been utilized to achieve very precise orientation of silicon wafers, of thickness up to 0.5 mm with an accuracy to 0.02°.
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