| Автор | G Dearnaley |
| Автор | M A Wilkins |
| Дата выпуска | 1967-10-01 |
| dc.description | Proton channelling has been utilized to achieve very precise orientation of silicon wafers, of thickness up to 0.5 mm with an accuracy to 0.02°. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Crystal wafer orientation by proton channelling |
| Тип | note |
| DOI | 10.1088/0950-7671/44/10/424 |
| Print ISSN | 0950-7671 |
| Журнал | Journal of Scientific Instruments |
| Том | 44 |
| Первая страница | 880 |
| Последняя страница | 881 |
| Аффилиация | G Dearnaley; Nuclear Physics Division, Atomic Energy Research Establishment, Harwell |
| Аффилиация | M A Wilkins; Nuclear Physics Division, Atomic Energy Research Establishment, Harwell |
| Выпуск | 10 |
