It was found that the resistance of (YBCO) films could be well controlled by Ni ion implantation. Both resistance and susceptibility measurements showed that the critical temperature of a film was systematically suppressed from its original value to an insulting state with increasing implantation dose. The sheet resistance varies from to at 77 K with dose ranging from to . For doses above , we observed an ion gettering effect after subsequent annealing in which the implanted ions diffuse against the concentration gradient and getter towards the peak concentration region.