Control of YBCO sheet resistance with Ni implantation
S H Hong; J D Baniecki; Q Y Ma; J R LaGraff; J M Murduck; H Chan
Журнал:
Superconductor Science and Technology
Дата:
1998-04-01
Аннотация:
It was found that the resistance of (YBCO) films could be well controlled by Ni ion implantation. Both resistance and susceptibility measurements showed that the critical temperature of a film was systematically suppressed from its original value to an insulting state with increasing implantation dose. The sheet resistance varies from to at 77 K with dose ranging from to . For doses above , we observed an ion gettering effect after subsequent annealing in which the implanted ions diffuse against the concentration gradient and getter towards the peak concentration region.
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