| Автор | S H Hong |
| Автор | J D Baniecki |
| Автор | Q Y Ma |
| Автор | J R LaGraff |
| Автор | J M Murduck |
| Автор | H Chan |
| Дата выпуска | 1998-04-01 |
| dc.description | It was found that the resistance of (YBCO) films could be well controlled by Ni ion implantation. Both resistance and susceptibility measurements showed that the critical temperature of a film was systematically suppressed from its original value to an insulting state with increasing implantation dose. The sheet resistance varies from to at 77 K with dose ranging from to . For doses above , we observed an ion gettering effect after subsequent annealing in which the implanted ions diffuse against the concentration gradient and getter towards the peak concentration region. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Control of YBCO sheet resistance with Ni implantation |
| Тип | paper |
| DOI | 10.1088/0953-2048/11/4/005 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 11 |
| Первая страница | 375 |
| Последняя страница | 377 |
| Выпуск | 4 |
