Window-type tunnel devices on YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> thin films
J H James; B Dwir; M Affronte; A Munzner; T Naucler; B J Kellet; D Pavuna; J H James; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland; B Dwir; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland; M Affronte; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland; A Munzner; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland; T Naucler; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland; B J Kellet; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland; D Pavuna; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Журнал:
Superconductor Science and Technology
Дата:
1991-01-01
Аннотация:
The authors present the first YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>-Pb tunnelling measurements using window-type tunnel devices. YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> (YBCO) thin films are grown in-situ by dual Ar<sup>+</sup> ion beam sputtering. Tunnel barriers are formed on a chemically etched YBCO surface. Tunnelling dV/dI(V) characteristics show reproducible weak gap-like structure 4.4+or-0.4 meV and 22+or-2 meV, the latter giving a 2 Delta /k<sub>B</sub>T<sub>c</sub> value of about 6.5.
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