| Автор | J H James |
| Автор | B Dwir |
| Автор | M Affronte |
| Автор | A Munzner |
| Автор | T Naucler |
| Автор | B J Kellet |
| Автор | D Pavuna |
| Дата выпуска | 1991-01-01 |
| dc.description | The authors present the first YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>-Pb tunnelling measurements using window-type tunnel devices. YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> (YBCO) thin films are grown in-situ by dual Ar<sup>+</sup> ion beam sputtering. Tunnel barriers are formed on a chemically etched YBCO surface. Tunnelling dV/dI(V) characteristics show reproducible weak gap-like structure 4.4+or-0.4 meV and 22+or-2 meV, the latter giving a 2 Delta /k<sub>B</sub>T<sub>c</sub> value of about 6.5. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Window-type tunnel devices on YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> thin films |
| Тип | paper |
| DOI | 10.1088/0953-2048/4/1S/031 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 4 |
| Первая страница | S136 |
| Последняя страница | S138 |
| Аффилиация | J H James; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Аффилиация | B Dwir; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Аффилиация | M Affronte; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Аффилиация | A Munzner; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Аффилиация | T Naucler; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Аффилиация | B J Kellet; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Аффилиация | D Pavuna; Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland |
| Выпуск | 1S |
