Deposition of MBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> thin films by channel-spark method
V I Dediu; Q D Jiang; F C Matacotta; P Scardi; M Lazzarino; G Nieva; L Civale; V I Dediu; HTS Lab., ICTP, Trieste, Italy; Q D Jiang; HTS Lab., ICTP, Trieste, Italy; F C Matacotta; HTS Lab., ICTP, Trieste, Italy; P Scardi; HTS Lab., ICTP, Trieste, Italy; M Lazzarino; HTS Lab., ICTP, Trieste, Italy; G Nieva; HTS Lab., ICTP, Trieste, Italy; L Civale; HTS Lab., ICTP, Trieste, Italy
Журнал:
Superconductor Science and Technology
Дата:
1995-03-01
Аннотация:
Channel-spark pulsed electron beam deposition (CS), a new deposition method based on a simple and inexpensive system, has been used for preparation of high-quality GdBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>, Gd<sub>1-x</sub>Eu<sub>x</sub>Ba<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> and YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> thin films epitaxially grown on NdGaO<sub>3</sub> and SrTiO<sub>3</sub> substrates. Typical critical temperatures for zero DC resistance lie in the intervals 87-89 K for Y-based films and 91.0-92.6 K for Gd- and GdEu-based ones. The transition widths for the best films are less than 0.5 K. The critical current densities reach the values of 3*10<sup>6</sup> A cm<sup>-2</sup> at 77 K, zero field.
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