Ion-beam-assisted sputter deposition of YSZ buffer layers for superconducting interconnect applications
G Florence; S Ang; W D Brown; G Florence; High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA; S Ang; High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA; W D Brown; High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA
Журнал:
Superconductor Science and Technology
Дата:
1995-07-01
Аннотация:
Yttria-stabilized zirconia (YSZ) buffer layers have been sputter deposited onto various substrates including silicon and nickel alloy using ion-beam-assisted deposition (IBAD). This technique resulted in the formation of buffer layers which exhibit strong (100) phase growth as well as in-plane orientation as evidenced by X-ray diffraction measurements. Subsequent YBCO depositions on these films exhibit T<sub>c</sub> values of 86 K and strong biaxial texture with the c axis normal to the surface. With further refinement, this technique may be used to fabricate the multilayer substrate structure needed for superconducting multichip modules.
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