Electron-electron scattering in narrow Si accumulation layers
D M Pooke; N Paquin; M Pepper; A Gundlach; D M Pooke; Cavendish Lab., Cambridge, UK; N Paquin; Cavendish Lab., Cambridge, UK; M Pepper; Cavendish Lab., Cambridge, UK; A Gundlach; Cavendish Lab., Cambridge, UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-05-22
Аннотация:
The authors report on measurements of the phase coherence time, tau <sub>phi </sub>, as determined from the measurement of weak negative magnetoresistance in narrow pinched Si accumulation layers. Under favourable bias conditions, one-dimensional quantum interference and electron interaction corrections to the conductivity are found. The phase coherence length is then best described in terms of the 1D Nyquist phase-breaking mechanism, with a Landau-Baber (pure metal limit) component which retains its 2D form.
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