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Автор D M Pooke
Автор N Paquin
Автор M Pepper
Автор A Gundlach
Дата выпуска 1989-05-22
dc.description The authors report on measurements of the phase coherence time, tau <sub>phi </sub>, as determined from the measurement of weak negative magnetoresistance in narrow pinched Si accumulation layers. Under favourable bias conditions, one-dimensional quantum interference and electron interaction corrections to the conductivity are found. The phase coherence length is then best described in terms of the 1D Nyquist phase-breaking mechanism, with a Landau-Baber (pure metal limit) component which retains its 2D form.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Electron-electron scattering in narrow Si accumulation layers
Тип lett
DOI 10.1088/0953-8984/1/20/010
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 1
Первая страница 3289
Последняя страница 3293
Аффилиация D M Pooke; Cavendish Lab., Cambridge, UK
Аффилиация N Paquin; Cavendish Lab., Cambridge, UK
Аффилиация M Pepper; Cavendish Lab., Cambridge, UK
Аффилиация A Gundlach; Cavendish Lab., Cambridge, UK
Выпуск 20

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