The localised vibrational mode two-phonon absorption of carbon in gallium arsenide
L Z Zhang; Y C Du; B R Zhang; Y H Wang; B C Ma; G G Gin; L Z Zhang; Dept. of Phys., Peking Univ., Beijing, China; Y C Du; Dept. of Phys., Peking Univ., Beijing, China; B R Zhang; Dept. of Phys., Peking Univ., Beijing, China; Y H Wang; Dept. of Phys., Peking Univ., Beijing, China; B C Ma; Dept. of Phys., Peking Univ., Beijing, China; G G Gin; Dept. of Phys., Peking Univ., Beijing, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-06-26
Аннотация:
It is found that the 1115 and 1157 cm<sup>-1</sup> absorption bands in GaAs doped intentionally with <sup>13</sup>C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of <sup>12</sup>C<sub>As</sub> and <sup>13</sup>C<sub>As</sub>. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for <sup>12</sup>C and <sup>13</sup>C in GaAs are about 87 at 300 K and 75 at 10 K, respectively.
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