| Автор | L Z Zhang |
| Автор | Y C Du |
| Автор | B R Zhang |
| Автор | Y H Wang |
| Автор | B C Ma |
| Автор | G G Gin |
| Дата выпуска | 1989-06-26 |
| dc.description | It is found that the 1115 and 1157 cm<sup>-1</sup> absorption bands in GaAs doped intentionally with <sup>13</sup>C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of <sup>12</sup>C<sub>As</sub> and <sup>13</sup>C<sub>As</sub>. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for <sup>12</sup>C and <sup>13</sup>C in GaAs are about 87 at 300 K and 75 at 10 K, respectively. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The localised vibrational mode two-phonon absorption of carbon in gallium arsenide |
| Тип | lett |
| DOI | 10.1088/0953-8984/1/25/015 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 4025 |
| Последняя страница | 4028 |
| Аффилиация | L Z Zhang; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | Y C Du; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | B R Zhang; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | Y H Wang; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | B C Ma; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | G G Gin; Dept. of Phys., Peking Univ., Beijing, China |
| Выпуск | 25 |
