The Hall effect and the electrical resistivity in amorphous Ni-B-Si alloys
J Ivkov; E Babic; H H Liebermann; J Ivkov; Inst. of Phys., Zabreb Univ., Yugoslavia; E Babic; Inst. of Phys., Zabreb Univ., Yugoslavia; H H Liebermann; Inst. of Phys., Zabreb Univ., Yugoslavia
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-01-23
Аннотация:
The values for the normal Hall coefficient, R<sub>0</sub>, electrical resistivity, rho , and the room-temperature coefficient of resistivity, alpha , for ten amorphous Ni-B-Si alloys, with metalloid concentration ranging from 20 to 39 at.% are reported. R<sub>0</sub> and alpha continuously decrease with increasing metalloid content, or for the fixed metalloid content, with increasing silicon concentration; and alpha changes sign for rho >or=140 mu Omega cm. The value of the Fermi wavevector deduced from R<sub>0</sub> (within the framework of the free-electron model) and its dependence on the composition of the alloy indicate that the transport properties of our alloys can be interpreted in terms of the Ziman-Faber theory. An alternative description of the variation of R<sub>0</sub> is also discussed.
311.9Кб