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Автор J Ivkov
Автор E Babic
Автор H H Liebermann
Дата выпуска 1989-01-23
dc.description The values for the normal Hall coefficient, R<sub>0</sub>, electrical resistivity, rho , and the room-temperature coefficient of resistivity, alpha , for ten amorphous Ni-B-Si alloys, with metalloid concentration ranging from 20 to 39 at.% are reported. R<sub>0</sub> and alpha continuously decrease with increasing metalloid content, or for the fixed metalloid content, with increasing silicon concentration; and alpha changes sign for rho >or=140 mu Omega cm. The value of the Fermi wavevector deduced from R<sub>0</sub> (within the framework of the free-electron model) and its dependence on the composition of the alloy indicate that the transport properties of our alloys can be interpreted in terms of the Ziman-Faber theory. An alternative description of the variation of R<sub>0</sub> is also discussed.
Формат application.pdf
Издатель Institute of Physics Publishing
Название The Hall effect and the electrical resistivity in amorphous Ni-B-Si alloys
Тип paper
DOI 10.1088/0953-8984/1/3/006
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 1
Первая страница 551
Последняя страница 555
Аффилиация J Ivkov; Inst. of Phys., Zabreb Univ., Yugoslavia
Аффилиация E Babic; Inst. of Phys., Zabreb Univ., Yugoslavia
Аффилиация H H Liebermann; Inst. of Phys., Zabreb Univ., Yugoslavia
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