Electronic structure of III-V ternary semiconductors
V B Gera; R Gupta; K P Jain; V B Gera; Laser Technol. Res. Programme, Indian Inst. of Technol., New Delhi, India; R Gupta; Laser Technol. Res. Programme, Indian Inst. of Technol., New Delhi, India; K P Jain; Laser Technol. Res. Programme, Indian Inst. of Technol., New Delhi, India
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-07-30
Аннотация:
Electronic band structures of the ternary alloys Ga<sub>x</sub>In<sub>1-x</sub>P, GaAs<sub>1-x</sub>P<sub>x</sub>, Ga<sub>x</sub>In<sub>1-x</sub>As and InAs<sub>1-x</sub>P<sub>x</sub> are calculated in the coherent-potential approximation (CPA) using the tight-binding Hamiltonian. The CPA energy bands are reported for the first time for the Ga<sub>x</sub>In<sub>1-x</sub>As and InAs<sub>1-x</sub>P<sub>x</sub> systems. The calculated variation of important direct and indirect energy gaps with composition x and their bowing is compared with the available experimental data, and good agreement is found for all the four ternary alloys studied.
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